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| SHINDENGEN Schottky Rectifiers (SBD) Dual DF40SC4 40V 40A FEATURE OUTLINE DIMENSIONS Case : STO-220 Unit : mm *oe SMT *oe Tj150*Z *oe PRRSM avalanche guaranteen *oe High current capacity with Small Package APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge Reverse Voltage 0.5ms, duty 1/40 V Pulse width RRSM 45 V Average Rectified Forward Current wave, R-load, Rating for each diode Io/2, T IO 50Hz sine 40 A IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak A 350 value, Tj= Repetitive Peak Surge Reverse Power 10Es, Rating of per diode, Tj=25*Z P Pulse width RRSM 1000 W *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Forward Voltage V IF F =20A, Pulse measurement, Rating of per V Max.0.55diode Reverse Current IR V=V,M Pulse measurement, Rating of per diode RR Max.14mA =10V, Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.860pF R Thermal Resistance j AEjcunction to case Max.1.5 Z/W * Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DF40SC4 100 Forward Voltage Forward Current IF [A] 10 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] DF40SC4 Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] DF40SC4 10000 Reverse Current 1000 Tc=150C [MAX] Tc=150C [TYP] Reverse Current IR [mA] 100 Tc=125C [TYP] Tc=100C [TYP] 10 Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] DF40SC4 80 70 Reverse Power Dissipation Reverse Power Dissipation PR [W] 60 50 40 DC D=0.05 0.1 0.2 0.3 0.5 30 20 10 0 SIN 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T DF40SC4 40 35 Forward Power Dissipation Forward Power Dissipation PF [W] DC 30 25 0.2 20 0.05 15 10 5 0 0.1 SIN 0.5 D=0.8 0.3 0 10 20 30 40 50 60 70 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T DF40SC4 80 Derating Curve Average Rectified Forward Current IO [A] 70 DC 60 D=0.8 50 40 0.5 SIN 0.3 30 0.2 20 10 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T DF40SC4 500 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 400 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 300 200 100 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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